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Current revision (22:24, 16 January 2025) (edit) (undo)
 
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3''')''' static semiconductor & contact resistivity R_d a.k.a parasitic resistivity.
3''')''' static semiconductor & contact resistivity R_d a.k.a parasitic resistivity.
'''('''b''')''' Figure 211b unbalancing and consolidation to help explain high median impedance of diffusion capacitor.
'''('''b''')''' Figure 211b unbalancing and consolidation to help explain high median impedance of diffusion capacitor.
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[[https://www.convexoptimization.com/TOOLS/Sedra.pdf PSPICE DEVICE MODELS & SIMULATION]]
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[[https://www.convexoptimization.com/TOOLS/Sedra.pdf PSPICE DEVICE MODELS & SIMULATION, App.B.1.2]]

Current revision

Diode test circuit model from Convex Optimization & Euclidean Distance Geometry, Chapter 8.1. (a) Large signal diode model: 1) junction capacitance C_j is small enough to ignore for audio applications, 2) diffusion capacitance C_d whose polarization (+) indicates significant capacitance only for positive bias voltage v_d ,  3) static semiconductor & contact resistivity R_d a.k.a parasitic resistivity. (b) Figure 211b unbalancing and consolidation to help explain high median impedance of diffusion capacitor. [PSPICE DEVICE MODELS & SIMULATION, App.B.1.2]

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(current)15:39, 16 January 2025Ranjelin (Talk | contribs)3510×3040784 KBDiode test circuit model.

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